4D NAND SSD and DDR5-4800 MHz RAM

Technology advances tirelessly, standards are being completed and manufacturers begin to test the limits of the new products they are going to launch.

The NAND Flash sector is extremely volatile and a disruptive launch can set the trend in the market and leave the rest out of date in a matter of months. Therefore, what is presented by SK Hynix can be a declaration of intent for this 2020, what improvements do they bring?

4D NANDs officially go on stage: 128 layers and up to 2TB capacity

More than a year and a half later since this technology was discussed as a concept prior to its development, SK Hynix has been able to show for the first time the first tangible products driven by this new type of cells.

Although the improvements of these new NAND 4D are not yet in full swing, it is true that they are the previous step to achieve higher capacity devices. And it is that the development of technology will arrive in two phases, the first being the one seen in this CES 2020.

In it, the so-called charge-trap flash or CTF They are grouped together with the peripheral blocks, managing to maintain the traditional 2D structure, the main impediment to increasing the capacity of the chips in this technology. Therefore, SK Hynix has not been able to present high-capacity SSD and outperform its rivals. This will happen when this technology is mature and with it the size of the SSD will grow above 2 TB.

Three SSDs shown, RAM RDIMM DDR5, LPDDR4X and LPDDR5 debut with the brand