Samsung announces HBM2E Flashbolt memories: all the features

The Samsung HBM2E Flashbolt they offer a double density compared to HBM2 Aquabolt, 16 GB per single die, a characteristic that translates into one 16GB capacity per HBM2E stack (8 days of 16Gb). As for performance, the data transfer rate goes from 2.4 Gbps to 3.2 Gbps (+ 33%) for each HBM stack, the bandwidth increases to 410 GB / s instead. But that's not all, the manufacturer claims that these chips they can safely operate up to 4.2 Gbps (presumed to be overclocked), allowing in this way to bring the bandwidth from 410 to 538 GB per second.

The volume production of HBM2E memories will begin mid-year and in the first phase they will coexist on the market with the current HBM2 Aquabolt solutions. Definitely very satisfied Cheol Choi, executive vice president of Samsung's Memory Sales & Marketing division, declaring:

With the introduction of the best performing DRAM memory available to date, we are taking a fundamental step to strengthen our role as leader and innovator in the premium memory market; Samsung will continue to maintain its commitment to offer cutting-edge solutions.