Samsung begins mass production of DDR5 memory, up to 768 GB capacity and 7200 Mbps speed

Samsung started mass production of DDR5 memory which is being manufactured at the 14nm EUV node. For now this memory is for servers, supercomputers and servers for large companies, offering more than twice the performance of DDR4 memory.

According to Samsung, the new compute node will help Samsung’s 14nm DDR5 memory achieve an unprecedented increase in overall speeds. Currently, the 14nm EUV process will raise speeds to 7.2 Gbps, which is more than double the speed offered by DDR4 memory which is 3.2 Gbps. The company focuses the production of 14nm DDR5 memory to data centers, supercomputers and enterprise server applications. This would allow the company to scale DDR5 memory from 512GB – 1TB capacity to 768GB and 1.5TB capacity.

The 14nm process can help reduce power consumption by almost 20%.

“We have led the DRAM market for nearly three decades by pioneering technology innovations,” said Jooyoung Lee, senior vice president and director of DRAM technology and products at Samsung Electronics. “Today, Samsung is setting another technological milestone with multi-layer EUV technology that has enabled extreme miniaturization to 14 nm, a feat that is not possible with the conventional argon fluoride (ArF) process. Building on this advancement, we will continue to deliver the most differentiated memory solutions by fully addressing the need for higher performance and capacity in the world based on 5G data, AI, and the metaverse.

As DRAM continues to reduce manufacturing technology to 10nm, EUV technology becomes increasingly important to improve quality and achieve higher performance. By applying five EUV layers to 14nm DRAMs, Samsung has achieved higher bit density while improving overall wafer productivity by approximately 20%. In addition, the 14nm process can help reduce power consumption by almost 20% compared to the previous generation DRAM node (DDR4).