Samsung churns out 24 gigabit LPDDR4X memory chip

Samsung Electronics has announced the start of mass production of a “2 in 1” memory that it allows to have 12 GB of LPDDR4X next to an eUFS 3.0 NAND memory on a single package – the company talks about the uMCP solution.

This new memory comes about 7 months after the launch of a 12 GB LPDDR4X DRAM-based memory package with a density of 16 gigabit. This time the company made use of 24 gigabit chip, to be exact, four (3 GB x 4) made with a 1y nanometer production process. However, it is not clear what capacity NAND eUFS 3.0 has on board.

The market target of this new memory solution is the high-end smartphones, but potentially also mid-range solutions and many 2 in 1 devices, where low-consumption memories find more and more space thanks to a good compromise between speed, energy demand and size.

“With an increasingly marked trend towards large smartphones with high-resolution screens, more users will benefit from this uMCP solution for performing intensive or multitasking operations,” stresses Samsung.

“With 50% more capacity than the previous 8 GB package and the transfer speed of 4266 megabits per second, the new proposal guarantees the possibility of recording 4K video, artificial intelligence and machine learning potentially even on mid-range smartphones “.

In addition to the 12 GB LPDDR4X uMCP, the South Korean company will also bring to the market a 10 GB proposal consisting of two 24 gigabit (3 GB x 2) chips, two 16 GB (2 GB x 2) chips and eUFS 3.0 memory. The new offering will find space in the Samsung product range as well as that of other companies, but at the moment there is no further information.