SK hynix announced that it has developed a memoir DDR4 from 16 gigabit with production process a 1Z nanometers (i.e. in the 10 nanometer class). The South Korean company improved the productivity of this product by about 27% compared to the previous generation process, known as 1Y nm.
The 1Z nm process does not require the use of EUV lithography, which increases production costs, thus allowing the chip to maintain a competitive quality / price ratio.
For the 1Z nm DRAM, SK hynix has applied a “new substance not used in the previous production process, maximizing the electrical capacity of the chip, ie the amount of charge that a capacitor can store. A new design has also been introduced to increase operational stability. “
The new 16 Gbit RAM supports data transfer rate of 3200 Mbps and has a consumption reduced by 40% compared to chips of equal density but produced at 1Ynm.
“The 1Znm DRAM boasts the highest energy efficiency, speed and density in the industry, making it the best product to meet the evolving demand of customers looking for high performance and density DRAM.”
“SK hynix will start production and volume shipments during 2020 to meet market demand, ”said Lee Jung Hoon, director of the 1Z TF division of DRAM Development & Business. SK hynix plans to expand production to 1Z nm to LPDDR5 memories and HBM3 memories.